| PART |
Description |
Maker |
| AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位）的CMOS 5.0伏只，扇区擦除闪
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV800B-100 AM29LV800B-150 AM29LV800B-90R AM29L |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
|
Advanced Micro Devices
|
| AM29LV800B-100 AM29LV800B-120 AM29LV800B-150 AM29L |
8 Megabit (1048576 x 8-Bit/524288 x 16-Bit) CMOS 3.0 Volt-only Sectored Flash Memory
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
AMD[Advanced Micro Devices]
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5 |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位（1048,576 - Word 524,288字BY16位）的CMOS 3.3只，块擦除闪
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| TC554001ATRI-70 TC554001AFI-70 TC554001AFI-70L TC5 |
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA
|
| TC55NEM208AFTN55 TC55NEM208AFPN70 |
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA
|
| TC55V040AFT-55 TC55V040AFT-70 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MSM56V16160F |
2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic components
OKI[OKI electronic componets]
|
| TC55VCM208ASTN40 TC55VCM208ASTN55 |
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
